Infineon Technologies - IRGCC50FE

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IRGCC50FE by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGCC50FE
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e0; Maximum Gate-Emitter Threshold Voltage: 5.5 V;
Datasheet IRGCC50FE Datasheet
In Stock817
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Additional Features: FAST SPEED
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