Infineon Technologies - IGC54T65T8RMX1SA2

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IGC54T65T8RMX1SA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC54T65T8RMX1SA2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 650 V; Minimum Operating Temperature: -40 Cel;
Datasheet IGC54T65T8RMX1SA2 Datasheet
In Stock516
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 9
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.82 V
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