FGD3040G2_F085 by Fairchild Semiconductor | Transistors

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Manufacturer	Fairchild Semiconductor
Manufacturer's Part Number	FGD3040G2_F085
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 23.2 A; Transistor Application: AUTOMOTIVE IGNITION;
Datasheet	FGD3040G2_F085 Datasheet
In Stock	9,152

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	23.2 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	7000 ns
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	15000 ns
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	390 V
Maximum Gate-Emitter Voltage:	14 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
9,152	-	-

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