Onsemi - HGT1S20N60C3S

HGT1S20N60C3S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HGT1S20N60C3S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; JEDEC-95 Code: TO-263AB;
Datasheet HGT1S20N60C3S Datasheet
In Stock2,194
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 45 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 28 ns
Transistor Application: MOTOR CONTROL
Maximum Turn On Time (ton): 60 ns
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Surface Mount: YES
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 388 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 164 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 52 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 660 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 210 ns
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 1.8 V
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