HGTD3N60A4S by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	HGTD3N60A4S
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 17 A; Case Connection: COLLECTOR;
Datasheet	HGTD3N60A4S Datasheet
In Stock	2,676

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	17 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	15 ns
Transistor Application:	POWER CONTROL
Maximum Turn On Time (ton):	23 ns
Maximum Gate-Emitter Threshold Voltage:	7 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	180 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	70 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	17.5 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	265 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	100 ns
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,676	$0.397	$1,062.372

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