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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NGTD17T65F2WP |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Form: NO LEAD; No. of Elements: 1; |
| Datasheet | NGTD17T65F2WP Datasheet |
| In Stock | 410 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Maximum Collector-Emitter Voltage: | 650 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2 V |
