HGT1S11N120CNS by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	HGT1S11N120CNS
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Terminal Position: SINGLE;
Datasheet	HGT1S11N120CNS Datasheet
In Stock	1,256

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	43 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	16 ns
Transistor Application:	POWER CONTROL
Maximum Turn On Time (ton):	40 ns
Surface Mount:	YES
Nominal Turn Off Time (toff):	550 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	298 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	33 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	680 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	400 ns
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	1200 V
Additional Features:	AVALANCHE RATED, LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.4 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,256	-	-

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