MG150J7KS50 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG150J7KS50
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 150 A; Terminal Finish: TIN LEAD;
Datasheet	MG150J7KS50 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	150 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	300 ns
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	8 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	22
Maximum Power Dissipation (Abs):	320 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X22
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	320 W
Maximum Fall Time (tf):	500 ns
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH SPEED
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.8 V

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