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| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | VIE100-12S4 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 100 A; Qualification: Not Qualified; |
| Datasheet | VIE100-12S4 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 100 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 10 |
| Maximum Power Dissipation (Abs): | 625 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CUFM-X10 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 625 W |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 3.7 V |
