Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
194 W |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
59 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
5.9 V |
UPPER |
R-XUFM-X59 |
ISOLATED |
110.42 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
PIN/PEG |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-P17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
PIN/PEG |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-P17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
236 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
462 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
25 V |
6.8 V |
UPPER |
R-XUFM-X32 |
LOW CONDUCTION LOSS |
124 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
174 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
12 |
263 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
86 W |
48 A |
UNSPECIFIED |
POWER CONTROL |
2.22 V |
UNSPECIFIED |
RECTANGULAR |
6 |
130 ns |
27 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.2 V |
UPPER |
R-XUFM-X27 |
ISOLATED |
39 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
398 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
142 ns |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
104 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.85 V |
UNSPECIFIED |
RECTANGULAR |
6 |
756 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
57 ns |
|||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
104 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.75 V |
UNSPECIFIED |
RECTANGULAR |
6 |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
298 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
197 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
139 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
364 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
145 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
331 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167.2 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
250 W |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
398 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
142 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
6 |
331 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167.2 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
208 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
298 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
167 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
142.8 W |
15 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
199 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
134.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
197 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
139 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
8100 ns |
9 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
117 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
345 ns |
14 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
95 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
8100 ns |
9 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
18 |
MICROELECTRONIC ASSEMBLY |
150 Cel |
SILICON |
1700 V |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
119 W |
35 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
135 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
29 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
2735 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1160 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X9 |
1 |
ISOLATED |
720 ns |
UL APPROVED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
400 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
72 ns |
IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
24 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
260 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
29 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
215 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
12 |
346 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
UL APPROVED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
8100 ns |
7 |
FLANGE MOUNT |
SILICON |
6500 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1200 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
2400 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1810 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1010 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
14500 W |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
3550 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1150 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
29 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
250 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
125 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
800 ns |
35 |
FLANGE MOUNT |
SILICON |
1700 V |
-40 Cel |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
305 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
60 W |
19 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
249 ns |
26 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X26 |
ISOLATED |
Not Qualified |
e3 |
71 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
2095 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1075 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
825 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.65 V |
UNSPECIFIED |
RECTANGULAR |
2 |
4100 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
3300 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
690 ns |
IEC-60747; IEC-60749; IEC-60068 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
800 ns |
35 |
FLANGE MOUNT |
SILICON |
1700 V |
-40 Cel |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
305 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
95 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
760 ns |
24 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
150 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
7 |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-PUFM-X24 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
11500 W |
1800 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1860 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
Not Qualified |
260 |
900 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
175 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
4 |
295 ns |
14 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X14 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.65 V |
UNSPECIFIED |
RECTANGULAR |
3 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
58 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
160 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
255 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
230 W |
45 A |
UNSPECIFIED |
3.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
420 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
90 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
45 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
390 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
e3 |
105 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
385 W |
75 A |
UNSPECIFIED |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
COMPLEX |
NO |
250 W |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
270 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.