COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

NXH300B100H4Q2F2SG-R

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

NXH800A100L4Q2F2P1G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-X17

ISOLATED

223.8 ns

NXH800A100L4Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

PIN/PEG

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-P17

ISOLATED

223.8 ns

NXH800A100L4Q2F2S2G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

PIN/PEG

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-P17

ISOLATED

223.8 ns

NXH800A100L4Q2F2P2G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-X17

ISOLATED

223.8 ns

FPF2G75FH07BP

Onsemi

N-CHANNEL

COMPLEX

NO

236 W

75 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

462 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-XUFM-X32

LOW CONDUCTION LOSS

124 ns

FPF2C8P2NL07A

Onsemi

N-CHANNEL

COMPLEX

NO

174 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

12

263 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

115 ns

NXH50M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

86 W

48 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

130 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

39 ns

A1P35S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

398 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

142 ns

STG3P3M25K120

STMicroelectronics

N-CHANNEL

COMPLEX

NO

104 W

50 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

6

756 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

57 ns

STG3P3M25N120

STMicroelectronics

N-CHANNEL

COMPLEX

NO

104 W

50 A

UNSPECIFIED

POWER CONTROL

2.75 V

UNSPECIFIED

RECTANGULAR

6

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

A2C50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

A1P25S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

A2C35S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

364 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

145 ns

A1P50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

A1P35S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

398 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

142 ns

A1P50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

A2C50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

A1C15S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

A1P25S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

FZ600R65KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

F3L100R07W2E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

117 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

345 ns

14

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

FD500R65KE3T-K

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

9

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

6MS30017E43W34404NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FS30R06XL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

119 W

35 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

135 ns

16

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FZ1800R12HE4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2735 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1160 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

1

ISOLATED

720 ns

UL APPROVED

FS35R12W1T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

400 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X15

ISOLATED

72 ns

IEC-61140

FB15R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

24 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FS3L50R07W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

75 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

12

346 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FZ500R65KE3TNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FZ2400R17HP4NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1010 ns

FZ1500R33HE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14500 W

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3550 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1150 ns

FB20R06W1E3B11HOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

29 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FP75R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FB15R06KL4B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

60 W

19 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

249 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X26

ISOLATED

Not Qualified

e3

71 ns

FZ3600R17HP4NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1075 ns

FZ825R33HE4D

Infineon Technologies

N-CHANNEL

COMPLEX

NO

825 A

PLASTIC/EPOXY

POWER CONTROL

2.65 V

UNSPECIFIED

RECTANGULAR

2

4100 ns

7

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

690 ns

IEC-60747; IEC-60749; IEC-60068

FP75R17N3E4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FP75R06KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

95 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

760 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

G150SPBK06P3H

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-PUFM-X24

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

FZ1800R17HP4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

260

900 ns

F3L50R06W1E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

175 W

75 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

295 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

DF75R12W1H4F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.65 V

UNSPECIFIED

RECTANGULAR

3

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

FP30R07U1E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

50 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

255 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

39 ns

UL APPROVED

BSM25GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

45 A

UNSPECIFIED

3.15 V

UNSPECIFIED

RECTANGULAR

7

420 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

BSM35GP120GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

e3

105 ns

FP75R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

385 W

75 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

F5-75R06KE3_B5

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.