FB20R06W1E3B11HOMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FB20R06W1E3B11HOMA1
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 29 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	FB20R06W1E3B11HOMA1 Datasheet
In Stock	345

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	29 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	250 ns
No. of Terminals:	22
Maximum Power Dissipation (Abs):	94 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	37 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X22
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
345	-	-

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;