A1P35S12M3 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	A1P35S12M3
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 35 A; Transistor Application: POWER CONTROL;
Datasheet	A1P35S12M3 Datasheet
In Stock	1,129

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	35 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	7 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	398 ns
No. of Terminals:	22
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	142 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X22
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.45 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,129	$36.390	$41,084.310

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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