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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | A1P35S12M3 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 35 A; Transistor Application: POWER CONTROL; |
| Datasheet | A1P35S12M3 Datasheet |
| In Stock | 1,129 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 35 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 398 ns |
| No. of Terminals: | 22 |
| Maximum Power Dissipation (Abs): | 250 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 142 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X22 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Other Names: | 497-17740 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.45 V |
