COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ2400R17HP4B2BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

930 ns

FZ1800R17HE4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1920 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

UL APPROVED

FS6R06VE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40.5 W

11 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

e3

26 ns

DF80R12W2H3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

190 W

50 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

2

600 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

FZ2400R17HE4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15500 W

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

1

ISOLATED

760 ns

FZ800R33KL2CNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9800 W

1500 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1700 ns

FZ1400R33HE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1400 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

4630 ns

7

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

930 ns

FZ2400R12HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

880 ns

DF300R07PE4_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

690 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

FZ2400R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3700 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1390 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

580 ns

2PS18012E44G38553

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FZ2400R17HP4B29BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

665 ns

F3L400R10W3S7F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

220 A

UNSPECIFIED

1.6 V

UNSPECIFIED

RECTANGULAR

6

773 ns

20

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X20

ISOLATED

127 ns

IEC-61140

FZ1600R17HP4B21BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X7

1

ISOLATED

690 ns

UL APPROVED

FS35R12YT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

225 W

40 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

FZ1800R12KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ3600R17HP4B2BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

945 ns

FS30R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

34 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

245 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

F3L150R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

500 W

UNSPECIFIED

POWER CONTROL

1.75 V

UNSPECIFIED

RECTANGULAR

4

510 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FZ500R65KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FP75R12N2T4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

600 ns

31

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X31

ISOLATED

170 ns

FS35R12W1T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

520 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

FP75R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FZ2400R12KL4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14800 W

3700 A

UNSPECIFIED

2.9 V

UNSPECIFIED

RECTANGULAR

3

1390 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

580 ns

FZ1600R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2450 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1310 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

490 ns

FZ3600R17HP4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

21000 W

3600 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

2095 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

945 ns

FS3L50R07W2H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FP25R12KT4_B15

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

FB20R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

29 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

250 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FP75R07N2E4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FZ500R65KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FP25R12W2T4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

175 W

39 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

47 ns

FP30R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

FS15R06VE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 W

22 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FZ2400R12HP4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

13500 W

3550 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

880 ns

FZ1600R17KE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10500 W

2400 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

900 ns

DF200R12W1H3_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

375 W

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

BSM50GP60_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

105 ns

BSM35GP120G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

180 W

45 A

UNSPECIFIED

2.85 V

UNSPECIFIED

RECTANGULAR

7

390 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FZ1800R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11000 W

1800 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ2400R12HE4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

1

ISOLATED

880 ns

UL APPROVED

FS15R06XE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

71.5 W

22 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

280 ns

16

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FZ2400R12HP4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

FZ600R65KF2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

6500 ns

9

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FS3L50R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

F3L200R07PE4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

DF80R12W2H3_B11

Infineon Technologies

N-Channel

COMPLEX

NO

190 W

50 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

2

600 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

F3L200R12N2H3B47BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

520 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

253 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.