Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
470 ns |
38 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X38 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
210 W |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL APPROVED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
600 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1600 ns |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
1000 ns |
||||||||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
22 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
475 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
37 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
245 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
95 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
258 ns |
18 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X18 |
1 |
ISOLATED |
44 ns |
|||||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
520 ns |
68 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X68 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
UL RECOGNIZED |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
SILICON |
1700 V |
-25 Cel |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
COMPLEX |
NO |
1040 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
200 ns |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
6 |
500 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
600 ns |
-40 Cel |
20 V |
1000 ns |
6.6 V |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
335 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
4 |
480 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
155 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
55 W |
15 A |
UNSPECIFIED |
2.55 V |
UNSPECIFIED |
RECTANGULAR |
7 |
260 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X22 |
ISOLATED |
Not Qualified |
e3 |
58 ns |
||||||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
885 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.95 V |
UNSPECIFIED |
RECTANGULAR |
7 |
530 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
390 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
450 ns |
35 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X35 |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||||||||||
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
88 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
480 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
105 ns |
IEC-60747-1; UL RECOGNIZED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
140 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
410 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
UL RECOGNIZED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
30 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
450 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
275 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
4 |
330 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
94 W |
27 A |
UNSPECIFIED |
POWER CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
250 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Fuji Electric |
N-CHANNEL |
COMPLEX |
NO |
50 A |
UNSPECIFIED |
POWER CONTROL |
600 ns |
2.65 V |
UNSPECIFIED |
RECTANGULAR |
7 |
300 ns |
530 ns |
24 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
1200 ns |
20 V |
1000 ns |
7 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
390 ns |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
COMPLEX |
NO |
280 W |
80 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
4 |
370 ns |
16 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X16 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
YES |
100 W |
23 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
3.1 V |
GULL WING |
RECTANGULAR |
4 |
1066 ns |
9 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2500 V |
20 V |
DUAL |
R-PDSO-G9 |
ISOLATED |
217 ns |
|||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
520 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
24 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
205 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
UL RECOGNIZED |
||||||||||||||||||||
Abb |
N-CHANNEL |
COMPLEX |
NO |
3600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1600 ns |
9 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
835 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1710 ns |
9 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
650 ns |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
231 W |
39 A |
UNSPECIFIED |
POWER CONTROL |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
620 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X24 |
UL APPROVED |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
44 W |
14 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
425 ns |
38 |
IN-LINE |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
MATTE TIN |
DUAL |
R-PDIP-T38 |
ISOLATED |
Not Qualified |
e3 |
400 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
8 |
MICROELECTRONIC ASSEMBLY |
150 Cel |
SILICON |
1200 V |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
COMPLEX |
NO |
63 W |
27 A |
UNSPECIFIED |
POWER CONTROL |
1.5 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
700 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-XSFM-T13 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT |
NOT SPECIFIED |
NOT SPECIFIED |
58 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
55 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
UL APPROVED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
165 W |
40 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
6670 ns |
9 |
FLANGE MOUNT |
SILICON |
4500 V |
-40 Cel |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1100 ns |
IEC-1287 |
|||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
24 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
190 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN/SILVER |
UPPER |
R-PUFM-X23 |
ISOLATED |
Not Qualified |
ULTRA FAST |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
IEC-60747-1 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
COMPLEX |
NO |
63 W |
27 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.5 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
240 ns |
380 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
570 ns |
6 V |
SINGLE |
R-PSFM-T13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
UL RECOGNIZED |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
SILICON |
-25 Cel |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-Channel |
COMPLEX |
YES |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
SILICON |
1700 V |
-25 Cel |
UNSPECIFIED |
R-XXMA-X |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
142.8 W |
15 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
199 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
134.5 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
1.8 V |
UNSPECIFIED |
RECTANGULAR |
8 |
346 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
22 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
260 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
29 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
205 W |
45 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
505 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1760 ns |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
-40 Cel |
UPPER |
R-PUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
955 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.