Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
460 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
22 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
260 ns |
15 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
1 |
ISOLATED |
29 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
2245 ns |
9 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
1075 ns |
UL APPROVED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
9000 W |
PLASTIC/EPOXY |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7350 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
4500 V |
-50 Cel |
20 V |
6.6 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1050 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
50 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
3.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
320 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
PURE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
90 W |
19 A |
UNSPECIFIED |
POWER CONTROL |
3.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
90 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
225 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
570 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
170 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
100 W |
28 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
YES |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
4 |
695 ns |
9 |
SMALL OUTLINE |
SILICON |
3000 V |
DUAL |
R-PDSO-G9 |
ISOLATED |
608 ns |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
350 ns |
24 |
FLANGE MOUNT |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
e3 |
90 ns |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
197 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
338 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
7 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
125.2 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
45 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
420 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
90 ns |
||||||||||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
COMPLEX |
NO |
565 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
200 ns |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
600 ns |
-40 Cel |
20 V |
1000 ns |
6.6 V |
UPPER |
R-PUFM-X23 |
ISOLATED |
UL RECOGNIZED |
|||||||||||||||||||||
|
Mitsubishi Electric |
N-CHANNEL |
COMPLEX |
NO |
565 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
150 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
43 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
450 ns |
-40 Cel |
20 V |
900 ns |
6.6 V |
UPPER |
R-PUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
COMPLEX |
NO |
12500 W |
900 A |
PLASTIC/EPOXY |
POWER CONTROL |
500 ns |
3.8 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1500 ns |
6400 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
6500 V |
1950 ns |
-50 Cel |
20 V |
12000 ns |
7.5 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
HIGH RELIABILITY |
IEC-60747; UL RECOGNIZED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
215 W |
45 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
4 |
375 ns |
19 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
54 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
600 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
110 W |
25 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
590 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
54 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
510 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
1 |
ISOLATED |
Not Qualified |
260 |
43 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
65 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
470 ns |
35 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
250 W |
95 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
760 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
385 W |
75 A |
UNSPECIFIED |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
3200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1140 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
890 ns |
|||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
83 W |
59 A |
UNSPECIFIED |
POWER CONTROL |
2.22 V |
UNSPECIFIED |
RECTANGULAR |
6 |
146 ns |
27 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.2 V |
UPPER |
R-XUFM-X27 |
ISOLATED |
72 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
158 W |
67 A |
UNSPECIFIED |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
4 |
293 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
RC-IGBT |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
158 W |
68 A |
UNSPECIFIED |
MOTOR CONTROL |
2 V |
UNSPECIFIED |
RECTANGULAR |
3 |
337 ns |
32 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X32 |
ISOLATED |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
54 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
328 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
412 ns |
20 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
93 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
820 A |
CERAMIC, METAL-SEALED COFIRED |
POWER CONTROL |
1.55 V |
UNSPECIFIED |
RECTANGULAR |
6 |
1354 ns |
21 |
FLANGE MOUNT |
175 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
6.6 V |
Matte Tin (Sn) - annealed |
UPPER |
R-CUFM-X21 |
e3 |
454 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
146 W |
65 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
550 ns |
20 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
500 W |
181 A |
UNSPECIFIED |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
435 ns |
56 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X56 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
158 W |
67 A |
UNSPECIFIED |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
4 |
293 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
RC-IGBT |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
194 W |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
59 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
5.9 V |
UPPER |
R-XUFM-X59 |
ISOLATED |
110.42 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
12 |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
146 W |
42 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
12 |
305 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
12 |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
146 W |
42 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
12 |
305 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
339 W |
263 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
8 |
3780 ns |
40 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X40 |
ISOLATED |
e3 |
357 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
186 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
125 W |
57 A |
UNSPECIFIED |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
4 |
320 ns |
18 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X18 |
ISOLATED |
RC-IGBT |
55 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
83 W |
59 A |
UNSPECIFIED |
POWER CONTROL |
2.22 V |
UNSPECIFIED |
RECTANGULAR |
6 |
146 ns |
27 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.2 V |
MATTE TIN |
UPPER |
R-XUFM-X27 |
ISOLATED |
e3 |
72 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
186 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
679 W |
256 A |
UNSPECIFIED |
POWER CONTROL |
102 ns |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
99 ns |
1096 ns |
56 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X56 |
ISOLATED |
373 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
81 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
12 |
551 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
77 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
194 W |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
59 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
5.9 V |
UPPER |
R-XUFM-X59 |
ISOLATED |
110.42 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
485 ns |
26 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.8 V |
DUAL |
R-XDIP-T26 |
240 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
81 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
12 |
551 ns |
44 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X44 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
77 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
158 W |
67 A |
UNSPECIFIED |
POWER CONTROL |
2.85 V |
UNSPECIFIED |
RECTANGULAR |
4 |
293 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
RC-IGBT |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
186 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.