Onsemi - NXH80T120L2Q0S1G

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NXH80T120L2Q0S1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH80T120L2Q0S1G
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 57 A; JESD-30 Code: R-XUFM-X18;
Datasheet NXH80T120L2Q0S1G Datasheet
In Stock1,515
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 57 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 320 ns
No. of Terminals: 18
Maximum Power Dissipation (Abs): 125 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 55 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 125 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: RC-IGBT
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.85 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,515 $22.880 $34,663.200

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