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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NXH35C120L2C2ESG |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Body Material: UNSPECIFIED; Nominal Turn Off Time (toff): 485 ns; |
| Datasheet | NXH35C120L2C2ESG Datasheet |
| In Stock | 496 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2832-NXH35C120L2C2ESG 488-NXH35C120L2C2ESG |
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 35 A |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.8 V |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 485 ns |
| No. of Terminals: | 26 |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 240 ns |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-XDIP-T26 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.4 V |









