NXH75M65L4Q1SG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH75M65L4Q1SG
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Collector Current (IC): 59 A; Transistor Element Material: SILICON;
Datasheet	NXH75M65L4Q1SG Datasheet
In Stock	259

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	59 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.2 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	146 ns
No. of Terminals:	27
Maximum Power Dissipation (Abs):	83 W
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	72 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X27
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.22 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
259	$66.820	$17,306.380

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;