Infineon Technologies - F3L25R12W1T4B27BOMA1

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F3L25R12W1T4B27BOMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F3L25R12W1T4B27BOMA1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 45 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet F3L25R12W1T4B27BOMA1 Datasheet
In Stock427
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 45 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 375 ns
No. of Terminals: 19
Maximum Power Dissipation (Abs): 215 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 54 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X19
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.25 V
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Pricing (USD)

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427 $23.590 $10,072.930

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