COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

DF80R12W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1.7 V

UNSPECIFIED

RECTANGULAR

2

375 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

FP30R06KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 W

37 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

7

750 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

FS35R12W1T4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

225 W

65 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

520 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL RECOGNIZED

F3L75R07W2E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

95 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

370 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

49 ns

F3L400R07PE4_B26

Infineon Technologies

N-Channel

COMPLEX

NO

1200 W

460 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

4

650 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL APPROVED

FZ2400R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10000 W

3200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

1140 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

890 ns

FP30R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

BSM20GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

7

310 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

FP75R07N2E4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FZ600R65KF2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

600 A

UNSPECIFIED

4.9 V

UNSPECIFIED

RECTANGULAR

3

6500 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

FZ2400R17KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FP25R12W2T4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

520 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

F450R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

203 ns

20

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FB20R06YE3B1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

190 ns

26

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X26

ISOLATED

33 ns

FS15R12YT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

110 W

25 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

FS3L30R07W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

12

350 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

FP75R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

FZ800R17KF6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

6600 W

1300 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

2

1220 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

440 ns

F3L400R12PT4_B26

Infineon Technologies

N-Channel

COMPLEX

NO

2150 W

600 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

610 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL APPROVED

F575R06KE3B5BOSA1

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FZ2400R17HP4_B29

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16000 W

2400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

260

665 ns

DF200R12W1H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

27 ns

FZ400R65KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

125 Cel

SILICON

6500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

850 ns

F3L100R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

375 W

100 A

UNSPECIFIED

1.75 V

UNSPECIFIED

RECTANGULAR

4

465 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

175 ns

UL APPROVED

F3L75R12W1H3_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

45 A

UNSPECIFIED

1.7 V

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

DF400R07PE4R_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

580 ns

17

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

216 ns

UL APPROVED

FZ2400R17HP4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14000 W

2400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

1010 ns

F3L75R12W1H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FP75R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

F3L200R12N2H3_B47

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

520 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

253 ns

F450R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FZ400R65KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

3.4 V

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

125 Cel

SILICON

6500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FB10R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

18 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

FS6R06VE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40.5 W

11 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

6MS30017E43W40372NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FZ1600R17KF6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

12500 W

2600 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

2

1360 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

490 ns

FP75R12N2T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

199 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FZ2400R17HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

1010 ns

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL APPROVED

FZ2400R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FZ1800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2850 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

6MS10017E41W36460

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

F3L400R12PT4PB26BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

6MS30017E43W38169

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FS300R16KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

300 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

6

1600 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

TIN LEAD

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

e0

1000 ns

FZ800R12KS4B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

F430R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

BSM30GP60

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

70 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.