Infineon Technologies - DF80R12W2H3F_B11

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DF80R12W2H3F_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF80R12W2H3F_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 22; Nominal Turn Off Time (toff): 375 ns; Package Style (Meter): FLANGE MOUNT;
Datasheet DF80R12W2H3F_B11 Datasheet
In Stock825
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 375 ns
No. of Terminals: 22
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 40 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.7 V
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Pricing (USD)

Qty. Unit Price Ext. Price
825 $69.680 $57,486.000

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