COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP25R12W1T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

359 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

57 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

IFS150B12N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

240 ns

UL RECOGNIZED

FS3L50R07W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

12

243 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

81 ns

BSM35GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

105 ns

FZ2400R17HP4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14000 W

2400 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

930 ns

6MS30017E43W40372

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FZ1800R17HP4B29BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

FZ2000R33HE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2000 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4880 ns

9

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

ISOLATED

960 ns

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

FZ1800R45HL4_S7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

25 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

F3L100R07W2E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

300 W

117 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

345 ns

14

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

UPPER

R-XUFM-X14

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

FB20R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

29 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FZ2400R17HP4B29BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

665 ns

FZ800R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

2.7 V

UNSPECIFIED

RECTANGULAR

2

1050 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ3600R17HE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2245 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

1075 ns

UL APPROVED

FS3L25R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

12

295 ns

34

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

FP75R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

350 W

105 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FB15R06KL4B1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

249 ns

26

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X26

ISOLATED

71 ns

FZ1600R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7800 W

2300 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

1140 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

880 ns

FB15R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

81 W

24 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FS15R06VL4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80.5 W

20 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

115 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

22 ns

FP75R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

F3L400R10W3S7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

235 A

UNSPECIFIED

1.61 V

UNSPECIFIED

RECTANGULAR

6

311 ns

18

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.85 V

UPPER

R-XUFM-X18

ISOLATED

111 ns

IEC-61140

DF200R12PT4B6BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

FP25R12KS4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

40 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

7

460 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

FP20R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

27 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FZ1800R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1600 ns

9

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FZ2400R12KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

890 ns

FZ2400R17HE4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

1

ISOLATED

760 ns

F3L400R12PT4P_B26

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

IFS150B17N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

760 ns

37

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X37

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

F3L100R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

465 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

175 ns

UL APPROVED

FB20R06KL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 W

25 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

192 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

68 ns

FP30R06W1E3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

37 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL RECOGNIZED

FZ1800R12HE4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2735 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1160 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

1

ISOLATED

720 ns

UL APPROVED

FP75R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FS35R12YT3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X22

ISOLATED

120 ns

FZ750R65KE3T

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FS3L40R07W2H5F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

1.81 V

UNSPECIFIED

RECTANGULAR

12

104 ns

38

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X38

ISOLATED

27 ns

IEC-61140; UL RECOGNIZED

FZ30R07W1E3_B31A

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

1

ISOLATED

FZ1600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FP75R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

320 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

FP30R06YE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 W

37 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

F3L200R07W2S5F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

95 A

UNSPECIFIED

POWER CONTROL

1.38 V

UNSPECIFIED

RECTANGULAR

4

683 ns

14

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X14

ISOLATED

143 ns

IEC-61140; UL RECOGNIZED

FZ1800R17HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1920 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

UL APPROVED

FZ1800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2850 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1350 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

830 ns

BSM35GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

45 A

UNSPECIFIED

2.85 V

UNSPECIFIED

RECTANGULAR

7

390 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FB20R06YE3_B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

77 W

27 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

7

190 ns

26

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X26

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

33 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.