COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ1600R12KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2300 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1140 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

1

ISOLATED

Not Qualified

880 ns

FZ3600R17HE4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

3

2245 ns

9

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1075 ns

FB20R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

29 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

250 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FZ1800R16KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

3

1600 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FP25R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

40 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

DF160R12W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

4

375 ns

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

FZ3600R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14800 W

4700 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

880 ns

FZ800R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1500 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

1400 ns

FZ800R16KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

GENERAL PURPOSE

3.5 V

UNSPECIFIED

RECTANGULAR

2

1600 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FZ3600R12HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

890 ns

BSM50GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

FP75R12N2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

430 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

UL RECOGNIZED

199 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FB20R06W1E3_B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

29 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

250 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X22

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FP25R12U1T4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

47 ns

FS3L30R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

FZ1800R12HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2735 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1160 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

UL APPROVED

FZ500R65KE3T

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

e0

1200 ns

BSM20GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

310 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

100 ns

6MS30017E43W34404

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FZ2400R17HE4P_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FP20R06KL4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

185 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

60 ns

FS300R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

300 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

1600 ns

21

FLANGE MOUNT

SILICON

1600 V

UPPER

R-XUFM-X21

ISOLATED

1000 ns

FS35R12U1T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

70 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

390 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X26

ISOLATED

32 ns

UL APPROVED

FP75R17N3E4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X35

ISOLATED

305 ns

FZ2400R12HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

FZ3600R12HP4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19000 W

4930 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

890 ns

DF160R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

UL APPROVED

IFS100B12N3E4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

515 W

150 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X34

ISOLATED

210 ns

FP75R12KT4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DF200R12PT4_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

F3L200R07PE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FZ2400R12HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

UL APPROVED

FP25R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FB10R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

68 W

18 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

FS35R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

520 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FZ2400R17HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

DF200R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

FS3L25R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

295 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

FZ800R45KL3_B5

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

PLASTIC/EPOXY

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

2

7350 ns

7

FLANGE MOUNT

125 Cel

SILICON

4500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

820 ns

6MS30017E43W38169NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FZ2400R12KE3_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

3200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

890 ns

FP25R12U1T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

190 W

39 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

1

ISOLATED

Not Qualified

260

47 ns

IFS150B12N3E4_B31

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X34

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

240 ns

FZ2400R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15000 W

2400 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FP06R12W1T4_B3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

12 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

565 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

FZ2400R12HE4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

1

ISOLATED

880 ns

UL APPROVED

F4-50R07W2H3_B51

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

65 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

4

342 ns

28

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

34 ns

UL APPROVED

F3L225R07W2H3PB63BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.65 V

UNSPECIFIED

RECTANGULAR

4

110 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

170 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.