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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | F4-50R07W2H3_B51 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel; |
Datasheet | F4-50R07W2H3_B51 Datasheet |
In Stock | 271 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 65 A |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 342 ns |
No. of Terminals: | 28 |
Maximum Power Dissipation (Abs): | 215 W |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 34 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X28 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Maximum Collector-Emitter Voltage: | 650 V |
Maximum Gate-Emitter Voltage: | 20 V |
Reference Standard: | UL APPROVED |
Maximum VCEsat: | 1.7 V |