Infineon Technologies - F4-50R07W2H3_B51

F4-50R07W2H3_B51 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F4-50R07W2H3_B51
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel;
Datasheet F4-50R07W2H3_B51 Datasheet
In Stock271
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 65 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 342 ns
No. of Terminals: 28
Maximum Power Dissipation (Abs): 215 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 34 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X28
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Maximum VCEsat: 1.7 V
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