DF160R12W2H3F_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DF160R12W2H3F_B11
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; No. of Terminals: 30; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet	DF160R12W2H3F_B11 Datasheet
In Stock	111

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	375 ns
No. of Terminals:	30
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	40 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X30
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
111	-	-

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