IFS100B12N3E4P_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IFS100B12N3E4P_B11
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 150 A; Package Body Material: UNSPECIFIED;
Datasheet	IFS100B12N3E4P_B11 Datasheet
In Stock	445

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	150 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.35 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	610 ns
No. of Terminals:	34
Maximum Power Dissipation (Abs):	515 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	210 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X34
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
445	$184.880	$82,271.600

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