Infineon Technologies - FP25R12KE3

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FP25R12KE3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP25R12KE3
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FP25R12KE3 Datasheet
In Stock990
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 40 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 610 ns
No. of Terminals: 24
Maximum Power Dissipation (Abs): 150 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 135 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X24
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.15 V
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Pricing (USD)

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