Infineon Technologies - FZ2000R33HE4

FZ2000R33HE4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ2000R33HE4
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2000 A; Nominal Turn On Time (ton): 960 ns; No. of Terminals: 9;
Datasheet FZ2000R33HE4 Datasheet
In Stock533
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2000 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 4880 ns
No. of Terminals: 9
Maximum Collector-Emitter Voltage: 3300 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 960 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X9
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
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