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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FB30R06W1E3_B1 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 39 A; Qualification: Not Qualified; |
Datasheet | FB30R06W1E3_B1 Datasheet |
In Stock | 712 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 39 A |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 245 ns |
No. of Terminals: | 22 |
Maximum Power Dissipation (Abs): | 115 W |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 42 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X22 |
No. of Elements: | 7 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 175 Cel |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | 260 |
Maximum VCEsat: | 2 V |