NXH80T120L2Q0S2G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH80T120L2Q0S2G
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Package Body Material: UNSPECIFIED;
Datasheet	NXH80T120L2Q0S2G Datasheet
In Stock	89

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	67 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	293 ns
No. of Terminals:	20
Maximum Power Dissipation (Abs):	158 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	88 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X20
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Other Names:	NXH80T120L2Q0S1GOS NXH80T120L2Q0S2GINACTIVE ONSONSNXH80T120L2Q0S2G 488-NXH80T120L2Q0S2G NXH80T120L2Q0S1GOS-ND NXH80T120L2Q0S2G-ND NXH80T120L2Q0S1G-ND NXH80T120L2Q0S1G 2156-NXH80T120L2Q0S2G-OS NXH80T120L2Q0S2GOS
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Additional Features:	RC-IGBT
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
89	$49.170	$4,376.130

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