FZ800R45KL3B5NOSA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FZ800R45KL3B5NOSA2
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9000 W; Minimum Operating Temperature: -50 Cel; JESD-30 Code: R-PUFM-X7;
Datasheet	FZ800R45KL3B5NOSA2 Datasheet
In Stock	606

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.6 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	7350 ns
No. of Terminals:	7
Maximum Power Dissipation (Abs):	9000 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	1050 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Other Names:	FZ800R45KL3_B5 2156-FZ800R45KL3B5NOSA2 INFINFFZ800R45KL3B5NOSA2 SP001035696
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-50 Cel
Maximum Collector-Emitter Voltage:	4500 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
606	$1,672.850	$1,013,747.100

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