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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FPF2G75FH07BP |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 236 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; |
| Datasheet | FPF2G75FH07BP Datasheet |
| In Stock | 985 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 75 A |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.8 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 462 ns |
| No. of Terminals: | 32 |
| Maximum Power Dissipation (Abs): | 236 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 124 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X32 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Other Names: | 488-FPF2G75FH07BP |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 650 V |
| Additional Features: | LOW CONDUCTION LOSS |
| Maximum Gate-Emitter Voltage: | 25 V |
| Maximum VCEsat: | 2.2 V |








