STMicroelectronics - A1P25S12M3

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A1P25S12M3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number A1P25S12M3
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 197 W; Maximum Collector Current (IC): 25 A; Maximum VCEsat: 2.45 V;
Datasheet A1P25S12M3 Datasheet
In Stock3,971
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 25 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Surface Mount: NO
Nominal Turn Off Time (toff): 326 ns
No. of Terminals: 22
Maximum Power Dissipation (Abs): 197 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 139 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.45 V
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