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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FZ1500R33HE3 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Gate-Emitter Voltage: 20 V; No. of Terminals: 5; |
Datasheet | FZ1500R33HE3 Datasheet |
In Stock | 626 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 3550 ns |
No. of Terminals: | 5 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 14500 W |
Maximum Collector-Emitter Voltage: | 3300 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 1150 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X5 |
No. of Elements: | 3 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |