Infineon Technologies - FZ1500R33HE3

FZ1500R33HE3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1500R33HE3
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Gate-Emitter Voltage: 20 V; No. of Terminals: 5;
Datasheet FZ1500R33HE3 Datasheet
In Stock626
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 3550 ns
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 14500 W
Maximum Collector-Emitter Voltage: 3300 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 1150 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X5
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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