Onsemi - NXH800A100L4Q2F2S2G

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NXH800A100L4Q2F2S2G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH800A100L4Q2F2S2G
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 309 A; Maximum Collector-Emitter Voltage: 1000 V;
Datasheet NXH800A100L4Q2F2S2G Datasheet
In Stock114
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 309 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.7 V
Surface Mount: NO
Nominal Turn Off Time (toff): 1121.94 ns
No. of Terminals: 17
Maximum Power Dissipation (Abs): 714 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 223.8 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-P17
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Other Names: 488-NXH800A100L4Q2F2S2G
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1000 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.3 V
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Pricing (USD)

Qty. Unit Price Ext. Price
114 $133.080 $15,171.120

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