F4-50R07W1H3_B11A by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	F4-50R07W1H3_B11A
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; Maximum VCEsat: 1.85 V;
Datasheet	F4-50R07W1H3_B11A Datasheet
In Stock	314

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	55 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	203 ns
No. of Terminals:	20
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	32 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X20
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	650 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.85 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
314	-	-

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