Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG50Q2YS9 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 50 A; No. of Elements: 2; Qualification: Not Qualified; Transistor Element Material: SILICON; |
| Datasheet | MG50Q2YS9 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 50 A |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| No. of Elements: | 2 |
| Polarity or Channel Type: | N-CHANNEL |








