Infineon Technologies - BSM75GB100D

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BSM75GB100D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM75GB100D
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Transistor Application: POWER CONTROL;
Datasheet BSM75GB100D Datasheet
In Stock63
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 75 A
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1000 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 30 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
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