SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR Insulated Gate Bipolar Transistors (IGBT) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FGHL75T65MQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	375 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	213 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T4		TO-247	e3			61 ns
STGW80H65FB-4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	469 W	120 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	448 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	7 V		SINGLE	R-PSFM-T4		TO-247		NOT SPECIFIED	NOT SPECIFIED	104 ns
IKZA40N65RH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	178 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T4	COLLECTOR	TO-247				24 ns
IKZA75N65RH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	395 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	195 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T4	COLLECTOR	TO-247	e3			33 ns
IKZA50N65RH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	305 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	198 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	Tin (Sn)	SINGLE	R-PSFM-T4	COLLECTOR	TO-247	e3			27 ns
IKZA50N65SS5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR	NO	274 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1	159 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	Tin (Sn)	SINGLE	R-PSFM-T4	COLLECTOR	TO-247	e3			28 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.