14 A Insulated Gate Bipolar Transistors (IGBT) 83

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGB3NC120HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		680 ns	2	SMALL OUTLINE			SILICON	1200 V					Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	30	245	18.5 ns
IRG4RC10SDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3	30	260	106 ns
IRG4BC10SD-SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	GULL WING	RECTANGULAR	1	1080 ns	1535 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	2280 ns	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	108 ns
STGIPL14K60	STMicroelectronics	N-CHANNEL	COMPLEX	NO	44 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	6		425 ns	38	IN-LINE	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V					MATTE TIN	DUAL	R-PDIP-T38		ISOLATED	Not Qualified			e3			400 ns
STGB7H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	GULL WING	RECTANGULAR	1		263 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	42.8 ns
IKA15N65F5XKSA1	Infineon Technologies	N-CHANNEL		NO	33.3 W	14 A											Insulated Gate BIP Transistors	175 Cel		650 V		20 V		4.8 V	TIN								e3
STGP7NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			63 ns
HGT1S7N60B3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
HGTD7N60C3S	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-252AA				20 ns
HGTP7N60B3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	175 ns	350 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				46 ns
HGTD7N60C3S9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2 V	GULL WING	RECTANGULAR	1	275 ns	490 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	RC-IGBT	TO-252AA	e3	30	260	20 ns
FGB7N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	89 ns	146.8 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	10.3 ns
HGTP7N60C3DR	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		490 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB				20 ns
HGT1S7N60B3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
HGTP7N60C3	Onsemi	N-CHANNEL	SINGLE	NO	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	275 ns	490 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-220AB				20 ns
STGD7NB60MT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		670 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			19 ns
STGD7NB60FT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			23 ns
STGD7NB60F	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			23 ns
STGF19NC60WD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		127 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				25 ns
STGD7NB60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3			63 ns
STGD14NC60K	STMicroelectronics	N-CHANNEL		YES	80 W	14 A											Insulated Gate BIP Transistors	150 Cel		600 V		20 V		6.5 V	MATTE TIN			1					e3
STGP7NB60KDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		202 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			21 ns
STGP7NB60F	STMicroelectronics	N-CHANNEL	SINGLE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		505 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3			23 ns
STGP3NC120HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	14 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		THROUGH-HOLE	RECTANGULAR	1		680 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			18.5 ns
STGD7NB60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e0			63 ns
STGB7NB60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified			e3			21 ns
STGB7NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE			SILICON	600 V						SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB				63 ns
STGBL6NC60DT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		122 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245	10.5 ns
STGB7NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified			e3			21 ns
STGB7NB60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	65 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified			e3			21 ns
STGP7H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		263 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	42.8 ns
STGB14NC60K	STMicroelectronics	N-CHANNEL		YES	80 W	14 A											Insulated Gate BIP Transistors	150 Cel		600 V		20 V		6.5 V	MATTE TIN			1					e3
STGPL6NC60DI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V		SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED	10.5 ns
STGF7H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	24 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		263 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		6.9 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	42.8 ns
STGD7NB60H-1	STMicroelectronics	N-CHANNEL	SINGLE	NO	55 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-251AA				63 ns
STGD7NB60K	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			21 ns
STGP7NB60MD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		670 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			19 ns
STGP7NB60KFP	STMicroelectronics	N-CHANNEL	SINGLE	NO	28 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		260 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			21 ns
STGB7NB40LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	100 W	14 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		GULL WING	RECTANGULAR	1		8000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	370 V		12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e3	30	245	5400 ns
STGB7NB40LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	100 W	14 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		GULL WING	RECTANGULAR	1		8000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	370 V		12 V		2.2 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e3			5400 ns
STGP7NB60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			63 ns
STGPL6NC60D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		122 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			10.5 ns
STGB7NB60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			63 ns
STGD7NB60KT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	45 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3			21 ns
STGP7NB60FD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		854 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			23 ns
STGB7NB60MDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		670 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified			e0			19 ns
STGB7NB60FDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		854 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified			e0			23 ns
STGP7NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	95 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		202 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			21 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.