16 A Insulated Gate Bipolar Transistors (IGBT) 106

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
RJH60M1DPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	16 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR							43 ns
RJH60M1DPP-M0#T2	Renesas Electronics	N-CHANNEL		NO	30 W	16 A											Insulated Gate BIP Transistors	150 Cel		600 V		30 V												NOT SPECIFIED	NOT SPECIFIED
IXGP8N100	Littelfuse	N-CHANNEL	SINGLE	NO	54 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	900 ns	990 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V	-55 Cel	20 V	1900 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXBA16N170AHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	40 ns
IXBH16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL	6 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	210 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	40 ns
IXGA8N100	Littelfuse	N-CHANNEL	SINGLE	YES	54 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	900 ns	990 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V	-55 Cel	20 V	1900 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	45 ns
IXBT16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	40 ns
IXBT16N170AHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	40 ns
SGP10N60RUF	Samsung	N-CHANNEL	SINGLE	NO		16 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		162 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				27 ns
SGL10N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		16 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		162 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264				27 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.