IXBT16N170AHV by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXBT16N170AHV
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR;
Datasheet	IXBT16N170AHV Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	16 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.5 V
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	210 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	40 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	350 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	100 ns
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-268AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	1700 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	6 V

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