1800 A Insulated Gate Bipolar Transistors (IGBT) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ1800R17HP4_B29

Infineon Technologies

N-CHANNEL

COMPLEX

NO

13000 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

880 ns

FZ1800R17HP4_B9

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11500 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

260

900 ns

FZ1800R45HL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

FZ1800R16KF4_S1

Infineon Technologies

N-Channel

11000 W

1800 A

125 Cel

SILICON

1600 V

-40 Cel

20 V

6.5 V

ISOLATED

1000 ns

FZ1800R12KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ1800R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11000 W

1800 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FZ1800R45HL4_S7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

25 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

FZ1800R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1600 ns

9

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FZ1800R16KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

3

1600 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FZ1800R17KF6B2

Infineon Technologies

13900 W

1800 A

3.1 V

3

Insulated Gate BIP Transistors

125 Cel

1700 V

20 V

FF450R17IE4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2800 W

1800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1800 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

650 ns

FF1800R12IE5P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

800 ns

14

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

510 ns

FZ1200R17KE3

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

7350 W

1800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1660 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FF1800R17IP5P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

1060 ns

14

FLANGE MOUNT

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

530 ns

FZ1200R17KE3NOSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1660 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

FF450R17IE4BOSA2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1800 ns

7

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

650 ns

MG1800V1US51

Toshiba

N-CHANNEL

NO

8300 W

1800 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH RELIABILITY

T1800GB45A

Littelfuse

N-CHANNEL

13700 W

1800 A

Insulated Gate BIP Transistors

125 Cel

4500 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.