23 A Insulated Gate Bipolar Transistors (IGBT) 65

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGPC30UD2-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AD

e0

111 ns

IRG4BC30U

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

33 ns

IRG4BC30U-STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

33 ns

IRGB4615DPBF

Infineon Technologies

N-CHANNEL

NO

99 W

23 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IRG4PC30UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG4BC30W

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRG4PC30U-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-247AD

e3

33 ns

IRG4BC30W-S

Infineon Technologies

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

30

225

41 ns

IRG4PC30WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

41 ns

IRG4BC30UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

62 ns

AUIRG4BC30U-SL

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

320 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

33 ns

IRG4PC30W

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

41 ns

MUBW20-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

68 W

23 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

IXYF30N450

Littelfuse

N-CHANNEL

SINGLE

NO

230 W

23 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

632 ns

MIAA5WB600TMH

Littelfuse

80 W

23 A

2.5 V

2

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

IXGF20N250

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

355 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2500 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

524 ns

UL RECOGNIZED

SGW23N60UF

Samsung

N-CHANNEL

SINGLE

YES

23 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

155 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

HIGH SPEED SWITCHING

32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.