23 A Insulated Gate Bipolar Transistors (IGBT) 65

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRG4BC30WPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	41 ns
IRG4BC30UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	130 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	62 ns
IRG4BC30UPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRA FAST SWITCHING	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	33 ns
IRG4PC30UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1	130 ns	171 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		-55 Cel	20 V	270 ns	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			61 ns
IRG4PC30UPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			33 ns
IRG4BC30W-SPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	100 ns	300 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3	30	260	41 ns
SGP23N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			55 ns
AUIRG4BC30U-S	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	150 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	33 ns
AUIRG4BC30USTRL	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	150 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			33 ns
IRG4BC30U-SPBF	International Rectifier	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	150 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	33 ns
MMIX4G20N250	Littelfuse	N-CHANNEL	COMPLEX	YES	100 W	23 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		3.1 V	GULL WING	RECTANGULAR	4		1066 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V			20 V				DUAL	R-PDSO-G9		ISOLATED							217 ns
IRGS4615DPBF	Infineon Technologies	N-CHANNEL		YES	99 W	23 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
STGF10NB60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		3100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			1160 ns
FGB3245G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	3500 ns	AEC-Q101
FGB3245G2_F085	Fairchild Semiconductor	N-CHANNEL		YES	150 W	23 A			7000 ns					15000 ns				Insulated Gate BIP Transistors	175 Cel		440 V			12 V		2.2 V				1							260
IRG4BC30W-STRL	International Rectifier	N-CHANNEL	SINGLE	YES		23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		300 ns	2	SMALL OUTLINE			SILICON	600 V						TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e0			41 ns
IRG4BC30W-STRR	International Rectifier	N-CHANNEL	SINGLE	YES		23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		300 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V						TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e0			41 ns
RGTH40TK65DGC11	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		141 ns	3	FLANGE MOUNT			SILICON	650 V						TIN	SINGLE	R-PSFM-T3		ISOLATED				e3			47 ns
FGD3245G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-55 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1				TO-252AA	e3	30	260	3500 ns	AEC-Q101
SGF23N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	30 W	23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			55 ns
SGH23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	SWITCHING		2.6 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	280 ns	-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3									42 ns
SGS23N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			55 ns
TIG111BF	Onsemi	N-CHANNEL	SINGLE	NO	60 W	23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		360 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			30 V		6 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				250 ns
SGS23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				44 ns
FGB3245G2-F085C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				3500 ns	AEC-Q101
SGF23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	75 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3		ISOLATED							55 ns
FGD3245G2-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	11000 ns	-55 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	3500 ns	AEC-Q101
SGP23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-220AB				55 ns
FGD3245G2-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	23 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.25 V	GULL WING	RECTANGULAR	1	15000 ns	8100 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3500 ns	AEC-Q101
SGP23N60UF	Onsemi	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				55 ns
SGP23N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			55 ns
IRGS4615DTRLPBF	Infineon Technologies	N-CHANNEL		YES	99 W	23 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGMC30FU	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	23 A	UNSPECIFIED				PIN/PEG	SQUARE	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V					5.5 V	TIN LEAD	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	FAST	TO-254AA	e0
BUP306D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	23 A	PLASTIC/EPOXY	POWER CONTROL	50 ns		THROUGH-HOLE	RECTANGULAR	1	30 ns	220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-218AB	e0			70 ns
IRGAC30F	Infineon Technologies	N-CHANNEL	SINGLE	NO		23 A	METAL				PIN/PEG	ROUND	1			2	FLANGE MOUNT			SILICON	600 V							BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	FAST	TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IGD10N65T6	Infineon Technologies	N-Channel			75 W	23 A				1.9 V					195 ns				175 Cel	SILICON	650 V		-40 Cel	20 V		6.4 V				1								45 ns
IRGMC30FDPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO		23 A	UNSPECIFIED				PIN/PEG	SQUARE	1			3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	S-XSFM-P3		ISOLATED		FAST	TO-254AA		NOT SPECIFIED	NOT SPECIFIED
IRGMC30FD	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	23 A	UNSPECIFIED				PIN/PEG	SQUARE	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V					5.5 V	TIN LEAD	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	FAST	TO-254AA	e0
IRGS4615DTRRPBF	Infineon Technologies	N-CHANNEL		YES	99 W	23 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGMC30FUPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO		23 A	UNSPECIFIED				PIN/PEG	SQUARE	1			3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	S-XSFM-P3		ISOLATED		FAST	TO-254AA		NOT SPECIFIED	NOT SPECIFIED
SP001537204	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1	130 ns	171 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	270 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AC				61 ns
SP001535872	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	175 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	270 ns	6 V		SINGLE	R-PSFM-T3					TO-220AB				26.6 ns
AUIRG4BC30USTRR	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	150 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			33 ns
IRGPC30K-E	Infineon Technologies	N-CHANNEL	SINGLE	NO		23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT			SILICON	600 V						TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e0			54 ns
IRG4BC30U-STRRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	23 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	150 ns	320 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3			33 ns
IRGPC30UD2-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR		ULTRA FAST SOFT RECOVERY	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	111 ns
IRG4PC30U	Infineon Technologies	N-CHANNEL	SINGLE	NO		23 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRA FAST SWITCHING	TO-247AC		NOT SPECIFIED	NOT SPECIFIED	33 ns
IRGPC30KD2-E	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			SILICON	600 V						TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	SHORT CIRCUIT RATED	TO-247AD	e0			164 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.