Onsemi - FGB3245G2-F085C

FGB3245G2-F085C by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGB3245G2-F085C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 23 A; Maximum Rise Time (tr): 7000 ns;
Datasheet FGB3245G2-F085C Datasheet
In Stock291
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 23 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Maximum Rise Time (tr): 7000 ns
Transistor Application: AUTOMOTIVE IGNITION
Maximum Turn On Time (ton): 11000 ns
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Surface Mount: YES
Nominal Turn Off Time (toff): 8100 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 3500 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 30000 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 15000 ns
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 440 V
Maximum Gate-Emitter Voltage: 12 V
Reference Standard: AEC-Q101
Maximum VCEsat: 1.25 V
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Pricing (USD)

Qty. Unit Price Ext. Price
291 $1.400 $407.400

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