Infineon Technologies - IGP40N65F5XKSA1

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IGP40N65F5XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGP40N65F5XKSA1
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 255 W; Maximum Collector Current (IC): 74 A; JESD-609 Code: e3; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IGP40N65F5XKSA1 Datasheet
In Stock187
NAME DESCRIPTION
Other Names: 2156-IGP40N65F5XKSA1
IGP40N65F5
SP000973422
448-IGP40N65F5
448-IGP40N65F5-ND
INFINFIGP40N65F5XKSA1
Maximum Collector Current (IC): 74 A
Maximum Power Dissipation (Abs): 255 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
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