Infineon Technologies - IGD10N65T6

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IGD10N65T6 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGD10N65T6
Description N-Channel; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 23 A; Moisture Sensitivity Level (MSL): 1; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 650 V;
Datasheet IGD10N65T6 Datasheet
In Stock430
NAME DESCRIPTION
Maximum Collector Current (IC): 23 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 195 ns
Maximum Power Dissipation (Abs): 75 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 45 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.9 V
Moisture Sensitivity Level (MSL): 1
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