Infineon Technologies - BUP306D

BUP306D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUP306D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 23 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet BUP306D Datasheet
In Stock28
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 23 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 50 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
Nominal Turn Off Time (toff): 220 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 165 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 70 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Fall Time (tf): 30 ns
JEDEC-95 Code: TO-218AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: HIGH SPEED
Maximum Gate-Emitter Voltage: 20 V
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