300 A Insulated Gate Bipolar Transistors (IGBT) 96

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
BSM150GAL120DLCHOSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	1		650 ns	5	FLANGE MOUNT				SILICON	1200 V						UPPER	R-XUFM-X5	ISOLATED						190 ns
BSM150GAL120DLC	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1200 W	300 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	1		650 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V			20 V			UPPER	R-XUFM-X5	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	190 ns
IRG7T300SD12B	Infineon Technologies	N-Channel				300 A				2.2 V					1315 ns					150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V			ISOLATED						440000 ns
IRG7T300HF12B	Infineon Technologies	N-Channel				300 A				2.2 V					795 ns					150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V			ISOLATED						210000 ns
FF300R12ME7_B11	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		300 A	UNSPECIFIED	POWER CONTROL		1.75 V	UNSPECIFIED	RECTANGULAR	2		480 ns	11	FLANGE MOUNT			175 Cel	SILICON	1200 V		-40 Cel	20 V		6.45 V	UPPER	R-XUFM-X11	ISOLATED		UL RECOGNIZED				204 ns	IEC-60747; IEC-60749; IEC-60068; IEC-61140
IRG7T300HF12J	Infineon Technologies	N-Channel				300 A				2.2 V					730 ns					150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V			ISOLATED						210000 ns
MG300Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	1200 V									Not Qualified
MG300Q1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1200 V									Not Qualified
MG300H1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		300 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		1000 ns	4	FLANGE MOUNT				SILICON	500 V						UPPER	R-PUFM-X4	ISOLATED	Not Qualified	HIGH SPEED				800 ns
MG200Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1400 W	300 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1400 W	150 Cel	SILICON	1200 V			20 V		6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	50 ns
MG300J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
MG300N1US42	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1000 V									Not Qualified
MG300Q1US21	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1200 V									Not Qualified
MG200Q1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	300 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1	300 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors	1500 W	150 Cel	SILICON	1200 V			20 V		6 V	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
MG300Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2800 W	300 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG300Q1US11	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2000 W	300 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns		4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			UPPER	R-PUFM-X4		Not Qualified
MG300J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	200 ns
MG300N1US1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1400 W	300 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	1		1300 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V						UPPER	R-PUFM-X4	ISOLATED	Not Qualified	HIGH SPEED SWITCHING				1200 ns
MG300J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
MG300J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V									Not Qualified
MG300Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1800 W	300 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors	1800 W	150 Cel	SILICON	1200 V			20 V		6 V	UPPER	R-XUFM-X8	ISOLATED	Not Qualified	HIGH SPEED				400 ns
MG300Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				170 ns
MG300Q1US2	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1200 V									Not Qualified
MG300Q2YS61	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				500 ns
MG300J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	200 ns
MG300Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	1200 V									Not Qualified
MG300N1US41	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A							1								SILICON	1000 V									Not Qualified
MBM300GS12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A		POWER CONTROL					2								SILICON	1200 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY				400 ns
MBM300GS6AW	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	800 W	300 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE				350 ns
RJP65S07DWA-80#W0	Renesas Electronics	N-CHANNEL				300 A												Insulated Gate BIP Transistors		150 Cel		650 V			30 V		6.8 V							NOT SPECIFIED	NOT SPECIFIED
MBM300GR6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	930 W	300 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		750 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE				350 ns
RJP1CS27DWA-80#W0	Renesas Electronics	N-CHANNEL	SINGLE	YES		300 A	UNSPECIFIED	POWER AMPLIFIER		2 V	NO LEAD	SQUARE	1		920 ns	5	UNCASED CHIP			175 Cel	SILICON	1250 V			30 V		6.8 V	UPPER	S-XUUC-N5					NOT SPECIFIED	NOT SPECIFIED	165 ns
MBN200A6	Renesas Electronics					300 A				2.5 V			1					Insulated Gate BIP Transistors				600 V			20 V
MBM300GS6A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A		POWER CONTROL					2								SILICON	600 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY				350 ns
MBM300GR12A	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		700 ns	7	FLANGE MOUNT				SILICON	1200 V						UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH RELIABILITY, LOW NOISE				350 ns
MBN300GS12A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE			300 A		POWER CONTROL					1								SILICON	1200 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY				400 ns
MBM300GR12	Renesas Electronics			NO	1710 W	300 A	PLASTIC/EPOXY			2.8 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V			20 V			UPPER	R-PUFM-X7		Not Qualified
RJP5001APP-00-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	45 W	300 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V			17 V		2.7 V	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB	NOT SPECIFIED	NOT SPECIFIED	600 ns
MBN300F12	Renesas Electronics					300 A				3 V			1					Insulated Gate BIP Transistors				1200 V			20 V
RJP1CS27DWS-80#W0	Renesas Electronics	N-CHANNEL	SINGLE	YES		300 A	UNSPECIFIED	POWER AMPLIFIER		2 V	NO LEAD	SQUARE	1		920 ns	5	UNCASED CHIP			175 Cel	SILICON	1250 V			30 V		6.8 V	UPPER	S-XUUC-N5					NOT SPECIFIED	NOT SPECIFIED	165 ns
RJP1CS07DWA-80#W0	Renesas Electronics	N-CHANNEL		YES		300 A												Insulated Gate BIP Transistors		150 Cel		1250 V			30 V		6.8 V							NOT SPECIFIED	NOT SPECIFIED
MBM300GS12AW	Renesas Electronics				1700 W	300 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V			20 V
RJP1CS07DWT-80#X0	Renesas Electronics	N-CHANNEL		YES		300 A												Insulated Gate BIP Transistors		150 Cel		1250 V			30 V		6.8 V							NOT SPECIFIED	NOT SPECIFIED
MBM300BS6	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A		POWER CONTROL					2								SILICON	600 V								ISOLATED	Not Qualified	HIGH SPEED, ULTRA SOFT FAST RECOVERY				400 ns
MBM300A6	Renesas Electronics					300 A				3 V			1					Insulated Gate BIP Transistors				600 V			20 V
MG06200S-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		440 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V		-40 Cel	20 V		6.5 V	UPPER	R-XUFM-X7	ISOLATED				NOT SPECIFIED	NOT SPECIFIED	200 ns	UL RECOGNIZED
MG17200D-BN4MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED	POWER CONTROL		2.45 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT			125 Cel	SILICON	1700 V		-40 Cel	20 V		6.4 V	UPPER	R-XUFM-X7	ISOLATED				NOT SPECIFIED	NOT SPECIFIED	480 ns	UL RECOGNIZED
MG12200D-BA1MM	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		300 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2		565 ns	7	FLANGE MOUNT			150 Cel	SILICON	1200 V		-40 Cel	20 V		7 V	UPPER	R-XUFM-X7	ISOLATED				NOT SPECIFIED	NOT SPECIFIED	195 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.